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主页 ›  IC供应信息  › 2SJ314-01L 搜索库存
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    2SJ314-01L,S P-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof FUJI POWER MOSFET FAP-III SERIES K-Pack(S) Outline Drawings K-Pack(L) Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ Maximum ratings and characteristics Absolute maximum ratings (Tc=25?C unless otherwise specified) Item Drain-source voltage Drain-gate voltage (RGS=20k) Continuous drain current Pulsed drain current Gate-source voltage Max. power dissipation Operating and storage temperature range Symbol V DS V DGR ID ID(puls] VGS PD Tch Tstg Rating -60 -60 -5 -20 ?20 20 +150 -55 to +150 Unit V A A A V W ?C ?C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25?C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Continuous reverse drain current Pulsed reverse drain current Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV IDR IDRM V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS= -60V VGS=0V VGS=?20V VDS=0V ID= -2.5A ID=2.5A VDS= -25V VDS= -25V VGS=0V f=1MHz VCC= -30V RG=25 ID= -3A VGS= -10V L=100H Tc=25?C Tc=25?C Tch=25?C Min. -60 -1.0 Tch=25?C Tch=125?C VGS= -4V VGS= -10V 2.0 Typ. -1.5 -10 -0.2 10 280 200 4.5 500 200 120 15 20 100 80 Max. -2.5 -500 -1.0 100 480 300 750 300 180 23 30 150 120 -5 -20 Units V V A mA nA m m S pF ns -5 IF=2xIDR VGS=0V Tch=25?C IF=IDR VGS=0V -di/dt=100A/s Tch=25?C -4.0 80 0.18 A A A V ns C Thermal characteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 6.25 125.0 Units ?C/W ?C/W 1 FUJI POWER MOSFET Characteristics 2SJ314-01L,S 2 FUJI POWER MOSFET 2SJ314-01L,S 3