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主页 ›  IC供应信息  › IRFD9110PBF 搜索库存
  型号 批号 数量 供应商 封装 描述 国家 所有者  
PRN1101643 10+ 1242 CMD SSOP16 现货供应 深圳市元泰电子有限公司
HIP6601BCB 10+/11 40000 N/A 标准封装 科航基业:010-57121889 科航基业
V48A15C500AL 100 VICOR 现货供应/STOCK 深圳市长诚科技有限公司
IRFD9110PBF 3422 Vishay/Siliconix 4-DIP MOSFET P-CH 100V 700MA 4-DIP XIA SONG ELECTRONICS CO.,LTD
IRFD9110PBF 250 VIS tel: 86-755-81245449 QQ: 149476620 沃成电子(香港)有限公司
IRFD9110PBF 250 VIS Tube tel: 86-755-36647196 QQ: 149476620 沃成电子(香港)有限公司
IRFD9110PBF 10+ 2000 VISHAY DIP-4 原装正品,100%优势,详情咨询。 ycr001

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  • PD- 95921 IRFD9110PbF Lead-Free www.irf.com 1 10/28/04 IRFD9110PbF 2 www.irf.com IRFD9110PbF www.irf.com 3 IRFD9110PbF 4 www.irf.com IRFD9110PbF www.irf.com 5 IRFD9110PbF 6 www.irf.com IRFD9110PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations ? Low Stray Inductance ? Ground Plane ? Low Leakage Inductance Current Transformer + + - ? dv/dt controlled by RG ? ISD controlled by Duty Factor "D" ? D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For P Channel HEXFETS www.irf.com 7 IRFD9110PbF Hexdip Package Outline Dimensions are shown in millimeters (inches) Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE AS S EMBLY LOT CODE Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com
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    属性

    Manufacturer : Vishay Product Category : MOSFETs RoHS : yes Product : General Purpose MOSFETs Configuration : Single Transistor Polarity : P-Channel Package / Case : HEXPDIP Drain-Source Breakdown Voltage : 100 V Continuous Drain Current : 0.7 A Power Dissipation : 1300 mW Resistance Drain-Source RDS (on) : 1.2 Ohm @ 10 V Typical Fall Time : 17 ns Typical Rise Time : 27 ns Typical Turn-Off Delay Time : 15 ns Packaging : Tube Gate-Source Breakdown Voltage : 20 V Maximum Operating Temperature : + 175 C Minimum Operating Temperature : - 55 C